SMALL SIGNAL MICROWAVE MEASUREMENTS OF FERROELECTRIC FILM PARAMETERS IN THE FREQUENCY RANGE FROM 1 GHz UPTO 80 GHz

Considered measurements enable the general picture of ferroelectric film properties on microwave to be obtained and the potentiality of the film application in devices operating in any frequency subranges of modern microwave microelectronics to be estimated.

Analysis of results of electrodeless measurements and measurements with electrodes makes it possible:

  • to separate and define metal and dielectric losses in ferroelectric elements and devices. Important for device design.
  • to know the influence of metal deposition process on properties of FE film. Important to correction of technology process.

Microwave measurements of the surface resistance of metal and superconducting films
(definition of conductive losses in the circuit metallization)

10GHz measurements of the surface resistance of metal films on the base of rutile resonator

60GHz measurements of surface resistance of metal films on the base of H011 cylindrical resonator

Results of measurements of superconducting films

 

Procedures and test fixtures for the microwave (1-80 GHz) characterization of ferroelectric films

MEASURING DEVICE No. 1 L-BAND STRIPLINE RESONATOR
L-BAND STRIPLINE RESONATOR
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 1 - 2 planar capacitors
Capacitance, pF 0.1 - 2
Dielectric Constant -*)
Loss Tangent 0.003 - 0.1
Bias Voltage Dependencies Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 2 L-BAND MICROSTRIP RESONATOR
L-BAND MICROSTRIP RESONATOR
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 1 - 2 planar capacitors
Capacitance, pF 0.25 - 4.5
Dielectric Constant -*)
Loss Tangent 0.01 - 0.2
Bias Voltage Dependencies Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 3 L/S BAND MICROSTRIP RESONATOR
L/S BAND MICROSTRIP RESONATOR
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 2 - 3 planar capacitors
Capacitance, pF 0.3 - 3
Dielectric Constant -*)
Loss Tangent 0.01 - 0.2
Bias Voltage Dependencies Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 4 X-BAND SUSPENDED SUBSTRATE RESONATOR
X-BAND SUSPENDED SUBSTRATE
RESONATOR
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 7 - 9 planar capacitors
Capacitance, pF 0.2 - 2
Dielectric Constant -*)
Loss Tangent 0.005 - 0.1
Bias Voltage Dependencies Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 5 K/Ka-BAND TEST FIXTURE (self-resonance of varactor)
K/Ka-BAND TEST FIXTURE
(self-resonance of varactor)
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 18 - 40 planar capacitors
Capacitance, pF 0.1 - 0.8
Dielectric Constant -*)
Loss Tangent 0.01 - 0.1
Bias Voltage Dependencies Yes, up to 400 V

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 6 K/Ka-BAND TEST FIXTURE
K/Ka-BAND TEST FIXTURE
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 19 - 21; 27-30 planar capacitors
Capacitance *), pF 0.1 - 1.0
Dielectric Constant -**)
Loss Tangent 0.005 - 0.2
Bias Voltage Dependencies Yes, up to 400 V

*) - two varactors of equal capacitance are concurrently under testing;

**) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 7 Ka BAND PARTIALLY FILLED WAVEGUIDE RESONATOR
Ka-BAND PARTIALLY FILLED
WAVEGUIDE RESONATOR
(electrodeless measurements)
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 27-35 dielectric plates
Capacitance, pF -
eFE x dFE , µm *) >2000
Loss Tangent 0.005 - 0.1
Bias Voltage Dependencies No

*) eFE - ferroelectric film dielectric constant, dFE - ferroelectric film thickness.

MEASURING DEVICE No. 8 Ka-BAND RING SUSPENDED SUBSTRATE RESONATOR
Ka-BAND RING SUSPENDED
SUBSTRATE RESONATOR
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 28-31 planar capacitors
Capacitance *), pF 0.1 - 0.6
Dielectric Constant -**)
Loss Tangent 0.005 - 0.2
Bias Voltage Dependencies Yes, up to 400 V

*) - two varactors of equal capacitance are concurrently under testing;

*) - dielectric constant is calculated from the capacitance measurements.


MEASURING DEVICE No. 9 V-BAND PARTIALLY FILLED WAVEGUIDE RESONATOR
V-BAND PARTIALLY FILLED WAVEGUIDE
RESONATOR (electrodeless measurements)
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 50-78 dielectric plates
Capacitance, pF -
eFE x dFE , µm *) >500
Loss Tangent 0.01 - 0.1
Bias Voltage Dependencies No

*) eFE - ferroelectric film dielectric constant, dFE - ferroelectric film thickness.


MEASURING DEVICE No. 10 U/V-BAND OPEN RESONATOR
U/V-BAND OPEN RESONATOR
(electrodeless measurements)
PARAMETER RANGE THE STRUCTURES TO BE TESTED
Frequency, GHz 40-78 dielectric plates **)
Capacitance, pF -
Dielectric Constant 200 - 1000 *)
Loss Tangent 0.001 - 0.1
Bias Voltage Dependencies No

*) - lower values of ferroelectric film dielectric constant can be measured for higher film thickness;

**) - the measurements are possible for the specimens of any shape at minimal sizes to be not less than 24 mm.