SMALL SIGNAL MICROWAVE MEASUREMENTS OF FERROELECTRIC FILM PARAMETERS IN THE FREQUENCY RANGE FROM 1 GHz UPTO 80 GHz

Considered measurements enable the general picture of ferroelectric film properties on microwave to be obtained and the potentiality of the film application in devices operating in any frequency subranges of modern microwave microelectronics to be estimated.

Analysis of results of electrodeless measurements and measurements with electrodes makes it possible: to separate and define metal and dielectric losses in ferroelectric elements and devices. Important for device design. to know the influence of metal deposition process on properties of FE film. Important to correction of technology process.

Microwave measurements of the surface resistance of metal and superconducting films
(definition of conductive losses in the circuit metallization)

10GHz measurements of the surface resistance of metal films on the base of rutile resonator

60GHz measurements of surface resistance of metal films on the base of H₀₁₁ cylindrical resonator

Results of measurements of superconducting films

Procedures and test fixtures for the microwave (1-80 GHz) characterization of ferroelectric films

MEASURING DEVICE No. 1
L-BAND STRIPLINE RESONATOR
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	1 - 2	planar capacitors
Capacitance, pF	0.1 - 2
Dielectric Constant	-*)
Loss Tangent	0.003 - 0.1
Bias Voltage Dependencies	Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 2
L-BAND MICROSTRIP RESONATOR
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	1 - 2	planar capacitors
Capacitance, pF	0.25 - 4.5
Dielectric Constant	-*)
Loss Tangent	0.01 - 0.2
Bias Voltage Dependencies	Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 3
L/S BAND MICROSTRIP RESONATOR
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	2 - 3	planar capacitors
Capacitance, pF	0.3 - 3
Dielectric Constant	-*)
Loss Tangent	0.01 - 0.2
Bias Voltage Dependencies	Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 4
X-BAND SUSPENDED SUBSTRATE RESONATOR
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	7 - 9	planar capacitors
Capacitance, pF	0.2 - 2
Dielectric Constant	-*)
Loss Tangent	0.005 - 0.1
Bias Voltage Dependencies	Yes, up to 300 V

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 5
K/Ka-BAND TEST FIXTURE (self-resonance of varactor)
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	18 - 40	planar capacitors
Capacitance, pF	0.1 - 0.8
Dielectric Constant	-*)
Loss Tangent	0.01 - 0.1
Bias Voltage Dependencies	Yes, up to 400 V

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 6
K/Ka-BAND TEST FIXTURE
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	19 - 21; 27-30	planar capacitors
Capacitance *), pF	0.1 - 1.0
Dielectric Constant	-**)
Loss Tangent	0.005 - 0.2
Bias Voltage Dependencies	Yes, up to 400 V

*) - two varactors of equal capacitance are concurrently under testing;

**) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 7
Ka-BAND PARTIALLY FILLED WAVEGUIDE RESONATOR (electrodeless measurements)
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	27-35	dielectric plates
Capacitance, pF	-
eFE x dFE , µm *)	>2000
Loss Tangent	0.005 - 0.1
Bias Voltage Dependencies	No

*) e_FE - ferroelectric film dielectric constant, d_FE - ferroelectric film thickness.

MEASURING DEVICE No. 8
Ka-BAND RING SUSPENDED SUBSTRATE RESONATOR
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	28-31	planar capacitors
Capacitance *), pF	0.1 - 0.6
Dielectric Constant	-**)
Loss Tangent	0.005 - 0.2
Bias Voltage Dependencies	Yes, up to 400 V

*) - two varactors of equal capacitance are concurrently under testing;

*) - dielectric constant is calculated from the capacitance measurements.

MEASURING DEVICE No. 9
V-BAND PARTIALLY FILLED WAVEGUIDE RESONATOR (electrodeless measurements)
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	50-78	dielectric plates
Capacitance, pF	-
eFE x dFE , µm *)	>500
Loss Tangent	0.01 - 0.1
Bias Voltage Dependencies	No

*) e_FE - ferroelectric film dielectric constant, d_FE - ferroelectric film thickness.

MEASURING DEVICE No. 10
U/V-BAND OPEN RESONATOR (electrodeless measurements)
PARAMETER	RANGE	THE STRUCTURES TO BE TESTED
Frequency, GHz	40-78	dielectric plates **)
Capacitance, pF	-
Dielectric Constant	200 - 1000 *)
Loss Tangent	0.001 - 0.1
Bias Voltage Dependencies	No

*) - lower values of ferroelectric film dielectric constant can be measured for higher film thickness;

**) - the measurements are possible for the specimens of any shape at minimal sizes to be not less than 24 mm.